Infineon BFP840FESDH6327XTSA1 Transistor, 35 mA NPN, 2.25 V, 4-Pin TSFP
- RS-stocknr.:
- 170-2364
- Fabrikantnummer:
- BFP840FESDH6327XTSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 20 eenheden)*
€ 4,38
(excl. BTW)
€ 5,30
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- 140 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 20 - 80 | € 0,219 | € 4,38 |
| 100 - 180 | € 0,213 | € 4,26 |
| 200 - 480 | € 0,207 | € 4,14 |
| 500 - 980 | € 0,202 | € 4,04 |
| 1000 + | € 0,197 | € 3,94 |
*prijsindicatie
- RS-stocknr.:
- 170-2364
- Fabrikantnummer:
- BFP840FESDH6327XTSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | Transistor | |
| Maximum DC Collector Current Idc | 35mA | |
| Maximum Collector Emitter Voltage Vceo | 2.25V | |
| Package Type | TSFP | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 2.9V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Transition Frequency ft | 85GHz | |
| Maximum Power Dissipation Pd | 75mW | |
| Transistor Polarity | NPN | |
| Minimum DC Current Gain hFE | 150 | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Length | 1.4mm | |
| Series | BFP840FESD | |
| Standards/Approvals | No | |
| Height | 0.55mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type Transistor | ||
Maximum DC Collector Current Idc 35mA | ||
Maximum Collector Emitter Voltage Vceo 2.25V | ||
Package Type TSFP | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 2.9V | ||
Minimum Operating Temperature -55°C | ||
Maximum Transition Frequency ft 85GHz | ||
Maximum Power Dissipation Pd 75mW | ||
Transistor Polarity NPN | ||
Minimum DC Current Gain hFE 150 | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Length 1.4mm | ||
Series BFP840FESD | ||
Standards/Approvals No | ||
Height 0.55mm | ||
Automotive Standard No | ||
The BFP840FESD is a high performance HBT (Heterojunction Bipolar Transistor) specifically designed for 5-6 GHz WiFi applications. The device is based upon the reliable high volume SiGe:C technology of Infineon. The BFP840FESD provides inherently good input and output power match as well as inherently good noise match at 5-6 GHz. The simultaneous noise and power match without lossy external matching components at the input leads to a low external parts count, to a very good noise figure and to a very high transducer gain in the WiFi application.
Robust high performance low noise amplifier based on Infineon's reliable, high volume SiGe:C wafer technology
2 kV ESD robustness (HBM) due to integrated protection circuits
High maximum RF input power of 21 dBm
0.6 dB minimum noise
26 dB maximum gain
23.5 dBm OIP3 typical at 5.5 GHz, 25 mA
Accurate SPICE GP model available to enable effective design in process
Gerelateerde Links
- Infineon Transistor 2.25 V, 4-Pin TSFP
- Infineon BFP843FH6327XTSA1 Bipolar Transistor 2.25 V, 4-Pin TSFP-4-1
- Infineon Transistor 6 V, 3-Pin TSFP
- Infineon BFR360FH6327XTSA1 Transistor 6 V, 3-Pin TSFP
- Infineon BFR360FH6765XTSA1 NPN Transistor 6 V, 3-Pin TSFP
- Infineon RF Bipolar Transistor 15 V, 3-Pin TSFP-3-1
- Infineon BFR360FH6765XTSA1 RF Bipolar Transistor 15 V, 3-Pin TSFP-3-1
- Infineon RF Bipolar Transistor 2.25 V, 4-Pin SOT-343