Infineon RF Bipolar Transistor, 35 mA NPN, 2.25 V, 4-Pin SOT-343
- RS-stocknr.:
- 259-1453
- Fabrikantnummer:
- BFP840ESDH6327XTSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
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€ 558,00
(excl. BTW)
€ 675,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
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- Verzending vanaf 02 februari 2027
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Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 - 3000 | € 0,186 | € 558,00 |
| 6000 - 6000 | € 0,177 | € 531,00 |
| 9000 + | € 0,173 | € 519,00 |
*prijsindicatie
- RS-stocknr.:
- 259-1453
- Fabrikantnummer:
- BFP840ESDH6327XTSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 35mA | |
| Maximum Collector Emitter Voltage Vceo | 2.25V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 2.9V | |
| Maximum Power Dissipation Pd | 75mW | |
| Transistor Polarity | NPN | |
| Minimum DC Current Gain hFE | 150 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Transition Frequency ft | 80GHz | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Height | 0.9mm | |
| Length | 2mm | |
| Standards/Approvals | RoHS | |
| Series | BFP | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 35mA | ||
Maximum Collector Emitter Voltage Vceo 2.25V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 2.9V | ||
Maximum Power Dissipation Pd 75mW | ||
Transistor Polarity NPN | ||
Minimum DC Current Gain hFE 150 | ||
Minimum Operating Temperature -55°C | ||
Maximum Transition Frequency ft 80GHz | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Height 0.9mm | ||
Length 2mm | ||
Standards/Approvals RoHS | ||
Series BFP | ||
Automotive Standard No | ||
The Infineon discrete hetero-junction bipolar transistor (HBT) specifically designed for high performance 5 GHz band. It is satellite communication systems are satellite radio (SDARs, DAB), navigation systems (e.g. GPS, Glonass, Beidou, Galileo).
High gain Gms 22.5 dB at 5.5 GHz, 1.8 V, 10 mA
OIP3 22 dBm at 5.5 GHz, 1.8 V, 10 mA
IC max +35mA
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