onsemi MJB45H11G Digital Transistor, -80 V PNP 10 A Surface, 2-Pin
- RS-stocknr.:
- 186-8019
- Fabrikantnummer:
- MJB45H11G
- Fabrikant:
- onsemi
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Subtotaal (1 verpakking van 10 eenheden)*
€ 7,86
(excl. BTW)
€ 9,51
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
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- Plus verzending 70 stuk(s) vanaf 04 mei 2026
- Plus verzending 130 stuk(s) vanaf 14 mei 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 10 + | € 0,786 | € 7,86 |
*prijsindicatie
- RS-stocknr.:
- 186-8019
- Fabrikantnummer:
- MJB45H11G
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | Digital Transistor | |
| Maximum Collector Emitter Voltage Vceo | -80V | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Emitter Base Voltage VEBO | 5V dc | |
| Minimum DC Current Gain hFE | 60 | |
| Transistor Polarity | PNP | |
| Maximum Continuous Collector Current Ic | 10A | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1V | |
| Maximum Power Dissipation Pd | 50W | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 2 | |
| Series | MJB45H | |
| Length | 9.65mm | |
| Height | 8.64mm | |
| Standards/Approvals | UL 94 V-0 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type Digital Transistor | ||
Maximum Collector Emitter Voltage Vceo -80V | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Emitter Base Voltage VEBO 5V dc | ||
Minimum DC Current Gain hFE 60 | ||
Transistor Polarity PNP | ||
Maximum Continuous Collector Current Ic 10A | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1V | ||
Maximum Power Dissipation Pd 50W | ||
Maximum Operating Temperature 150°C | ||
Pin Count 2 | ||
Series MJB45H | ||
Length 9.65mm | ||
Height 8.64mm | ||
Standards/Approvals UL 94 V-0 | ||
Automotive Standard AEC-Q101 | ||
The PNP Bipolar Power Transistor is designed for general purpose power amplification and switching such as output or driver stages in applications such as switching regulators, converters and power amplifiers. The MJB44H11 (NPN) and MJB45H11 (PNP) are complementary devices.
Low Collector-Emitter Saturation Voltage -
VCE(sat) = 1.0 V (Max) @ 8.0 A
Fast Switching Speeds
Complementary Pairs Simplifies Designs
NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements, PPAP capable
PbFree Packages are Available
