Infineon BFP640FH6327XTSA1 NPN RF Bipolar Transistor, 50 mA NPN, 4 V, 4-Pin TSFP
- RS-stocknr.:
- 216-8352
- Fabrikantnummer:
- BFP640FH6327XTSA1
- Fabrikant:
- Infineon
Subtotaal (1 verpakking van 50 eenheden)*
€ 9,30
(excl. BTW)
€ 11,25
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- 2.600 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 50 + | € 0,186 | € 9,30 |
*prijsindicatie
- RS-stocknr.:
- 216-8352
- Fabrikantnummer:
- BFP640FH6327XTSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | NPN RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 50mA | |
| Maximum Collector Emitter Voltage Vceo | 4V | |
| Package Type | TSFP | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 13V | |
| Maximum Transition Frequency ft | 42GHz | |
| Minimum Operating Temperature | -55°C | |
| Transistor Polarity | NPN | |
| Minimum DC Current Gain hFE | 110 | |
| Maximum Emitter Base Voltage VEBO | 1.2V | |
| Maximum Power Dissipation Pd | 200mW | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Series | BFP640F | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type NPN RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 50mA | ||
Maximum Collector Emitter Voltage Vceo 4V | ||
Package Type TSFP | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 13V | ||
Maximum Transition Frequency ft 42GHz | ||
Minimum Operating Temperature -55°C | ||
Transistor Polarity NPN | ||
Minimum DC Current Gain hFE 110 | ||
Maximum Emitter Base Voltage VEBO 1.2V | ||
Maximum Power Dissipation Pd 200mW | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Series BFP640F | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon BFP series is a RF bipolar transistor based on silicon germanium technology. Its transition frequency of 42 GHz and high linearity characteristics at low currents make the device suitable for energy efficiency designs at frequency as high as 8 GHz. It remains cost competitive without compromising on ease of use.
Provides outstanding performance for a wide range of wireless applications
Ideal for CDMA and WLAN applications
High maximum stable gain
Gold metallization for extra high reliability
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