Infineon BFP520H6327XTSA1 RF Bipolar Transistor, 50 mA NPN, 10 V, 4-Pin TSFP-4-1
- RS-stocknr.:
- 259-1430
- Artikelnummer Distrelec:
- 304-40-487
- Fabrikantnummer:
- BFP520H6327XTSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 25 eenheden)*
€ 7,00
(excl. BTW)
€ 8,50
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Laatste voorraad RS
- Laatste 2.975 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 225 | € 0,28 | € 7,00 |
| 250 - 600 | € 0,192 | € 4,80 |
| 625 - 1225 | € 0,179 | € 4,48 |
| 1250 - 2475 | € 0,168 | € 4,20 |
| 2500 + | € 0,128 | € 3,20 |
*prijsindicatie
- RS-stocknr.:
- 259-1430
- Artikelnummer Distrelec:
- 304-40-487
- Fabrikantnummer:
- BFP520H6327XTSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 50mA | |
| Maximum Collector Emitter Voltage Vceo | 10V | |
| Package Type | TSFP-4-1 | |
| Mount Type | Surface | |
| Transistor Configuration | Common Emitter | |
| Maximum Collector Base Voltage VCBO | 10V | |
| Minimum Operating Temperature | -55°C | |
| Minimum DC Current Gain hFE | 70 | |
| Transistor Polarity | NPN | |
| Maximum Emitter Base Voltage VEBO | 1V | |
| Maximum Power Dissipation Pd | 120mW | |
| Maximum Transition Frequency ft | 45GHz | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Height | 0.9mm | |
| Standards/Approvals | RoHS | |
| Series | BFP520F | |
| Length | 2mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 50mA | ||
Maximum Collector Emitter Voltage Vceo 10V | ||
Package Type TSFP-4-1 | ||
Mount Type Surface | ||
Transistor Configuration Common Emitter | ||
Maximum Collector Base Voltage VCBO 10V | ||
Minimum Operating Temperature -55°C | ||
Minimum DC Current Gain hFE 70 | ||
Transistor Polarity NPN | ||
Maximum Emitter Base Voltage VEBO 1V | ||
Maximum Power Dissipation Pd 120mW | ||
Maximum Transition Frequency ft 45GHz | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Height 0.9mm | ||
Standards/Approvals RoHS | ||
Series BFP520F | ||
Length 2mm | ||
Automotive Standard No | ||
The Infineon NPN silicon RF transistor. It is various applications like cellular and Cordless phones, DECT, Tuners, FM, and RF modems.
For low noise, high-gain amplifiers up to 2 GHz
For linear broadband amplifiers
fT 8 GHz, NFmin 1 dB at 900 MHz
Pb-free (RoHS compliant) package
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