Toshiba TBC847B,LM(T Bipolar Transistor, 200 mA NPN, 50 V, 3-Pin SOT-23
- RS-stocknr.:
- 236-3587
- Fabrikantnummer:
- TBC847B,LM(T
- Fabrikant:
- Toshiba
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 500 eenheden)*
€ 11,50
(excl. BTW)
€ 14,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- 39.500 stuk(s) klaar voor verzending vanaf een andere locatie
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 500 - 500 | € 0,023 | € 11,50 |
| 1000 - 1000 | € 0,02 | € 10,00 |
| 1500 - 2500 | € 0,02 | € 10,00 |
| 3000 + | € 0,018 | € 9,00 |
*prijsindicatie
- RS-stocknr.:
- 236-3587
- Fabrikantnummer:
- TBC847B,LM(T
- Fabrikant:
- Toshiba
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Toshiba | |
| Product Type | Bipolar Transistor | |
| Maximum DC Collector Current Idc | 200mA | |
| Maximum Collector Emitter Voltage Vceo | 50V | |
| Package Type | SOT-23 | |
| Mount Type | Surface | |
| Transistor Configuration | Single | |
| Maximum Collector Base Voltage VCBO | 60V | |
| Minimum DC Current Gain hFE | 200 | |
| Transistor Polarity | NPN | |
| Maximum Emitter Base Voltage VEBO | 6V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Power Dissipation Pd | 320mW | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 3 | |
| Height | 0.95mm | |
| Standards/Approvals | No | |
| Series | TBC847 | |
| Length | 2.9mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Toshiba | ||
Product Type Bipolar Transistor | ||
Maximum DC Collector Current Idc 200mA | ||
Maximum Collector Emitter Voltage Vceo 50V | ||
Package Type SOT-23 | ||
Mount Type Surface | ||
Transistor Configuration Single | ||
Maximum Collector Base Voltage VCBO 60V | ||
Minimum DC Current Gain hFE 200 | ||
Transistor Polarity NPN | ||
Maximum Emitter Base Voltage VEBO 6V | ||
Minimum Operating Temperature -55°C | ||
Maximum Power Dissipation Pd 320mW | ||
Maximum Operating Temperature 150°C | ||
Pin Count 3 | ||
Height 0.95mm | ||
Standards/Approvals No | ||
Series TBC847 | ||
Length 2.9mm | ||
Automotive Standard No | ||
The Toshiba bipolar transistor MADE up of the silicon material and having NPN epitaxial type. It is mainly used in low frequency amplifiers.
Storage temperature range −55 to 150 °C
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