Infineon BFP196E6327HTSA1 Bipolar Transistor, 150 mA NPN, 20 V, 4-Pin SOT-143
- RS-stocknr.:
- 258-7695
- Artikelnummer Distrelec:
- 304-40-483
- Fabrikantnummer:
- BFP196E6327HTSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 25 eenheden)*
€ 4,70
(excl. BTW)
€ 5,675
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- Plus verzending 1.225 stuk(s) vanaf 03 september 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 225 | € 0,188 | € 4,70 |
| 250 - 600 | € 0,179 | € 4,48 |
| 625 - 1225 | € 0,151 | € 3,78 |
| 1250 - 2475 | € 0,147 | € 3,68 |
| 2500 + | € 0,143 | € 3,58 |
*prijsindicatie
- RS-stocknr.:
- 258-7695
- Artikelnummer Distrelec:
- 304-40-483
- Fabrikantnummer:
- BFP196E6327HTSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | Bipolar Transistor | |
| Maximum DC Collector Current Idc | 150mA | |
| Maximum Collector Emitter Voltage Vceo | 20V | |
| Package Type | SOT-143 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 20V | |
| Maximum Power Dissipation Pd | 700mW | |
| Transistor Polarity | NPN | |
| Minimum DC Current Gain hFE | 70 | |
| Maximum Emitter Base Voltage VEBO | 2V | |
| Minimum Operating Temperature | -65°C | |
| Maximum Transition Frequency ft | 7.5GHz | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Standards/Approvals | RoHS | |
| Width | 2.4mm | |
| Length | 2.9mm | |
| Height | 1mm | |
| Series | BFP196 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type Bipolar Transistor | ||
Maximum DC Collector Current Idc 150mA | ||
Maximum Collector Emitter Voltage Vceo 20V | ||
Package Type SOT-143 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 20V | ||
Maximum Power Dissipation Pd 700mW | ||
Transistor Polarity NPN | ||
Minimum DC Current Gain hFE 70 | ||
Maximum Emitter Base Voltage VEBO 2V | ||
Minimum Operating Temperature -65°C | ||
Maximum Transition Frequency ft 7.5GHz | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Standards/Approvals RoHS | ||
Width 2.4mm | ||
Length 2.9mm | ||
Height 1mm | ||
Series BFP196 | ||
Automotive Standard AEC-Q101 | ||
The Infineon NPN silicon RF transistor is for low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz. This transistor is used for LNA in RF front end and wireless communications.
Power amplifier for DECT and PCN systems
Pb free RoHS compliant package
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