Infineon RF Bipolar Transistor, 50 mA NPN, 4.1 V, 4-Pin SOT-343
- RS-stocknr.:
- 259-1440
- Fabrikantnummer:
- BFP640H6327XTSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 rol van 3000 eenheden)*
€ 600,00
(excl. BTW)
€ 720,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- 3.000 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 - 3000 | € 0,20 | € 600,00 |
| 6000 - 6000 | € 0,195 | € 585,00 |
| 9000 + | € 0,19 | € 570,00 |
*prijsindicatie
- RS-stocknr.:
- 259-1440
- Fabrikantnummer:
- BFP640H6327XTSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 50mA | |
| Maximum Collector Emitter Voltage Vceo | 4.1V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 13V | |
| Maximum Transition Frequency ft | 42GHz | |
| Minimum Operating Temperature | -55°C | |
| Minimum DC Current Gain hFE | 110 | |
| Transistor Polarity | NPN | |
| Maximum Emitter Base Voltage VEBO | 1.2V | |
| Maximum Power Dissipation Pd | 200mW | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Height | 0.9mm | |
| Standards/Approvals | RoHS | |
| Series | BFP | |
| Length | 2mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 50mA | ||
Maximum Collector Emitter Voltage Vceo 4.1V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 13V | ||
Maximum Transition Frequency ft 42GHz | ||
Minimum Operating Temperature -55°C | ||
Minimum DC Current Gain hFE 110 | ||
Transistor Polarity NPN | ||
Maximum Emitter Base Voltage VEBO 1.2V | ||
Maximum Power Dissipation Pd 200mW | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Height 0.9mm | ||
Standards/Approvals RoHS | ||
Series BFP | ||
Length 2mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon silicon germanium carbon (SiGe:C) NPN heterojunction wideband bipolar RF transistor (HBT) in a plastic dual emitter standard package with visible leads. The device is fitted with internal protection circuits, which enhance robustness against ESD and high RF input power strongly. The device combines robustness with very high RF gain and lowest noise figure at low operation current for use in a wide range of wireless applications. The BFP640ESD is especially well-suited for portable battery-powered applications in which reduced power consumption is a key requirement. Device design supports collector voltages up to 4.1 V.
Robust high performance low noise amplifier based on Infineon's reliable
2 kV ESD robustness (HBM) due to integrated protection circuits
High maximum RF input power of 21 dBm
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