Infineon RF Bipolar Transistor, 80 mA NPN, 7.5 V, 4-Pin TSFP-4-1
- RS-stocknr.:
- 261-3946
- Fabrikantnummer:
- BFP620FH7764XTSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 rol van 3000 eenheden)*
€ 1.101,00
(excl. BTW)
€ 1.332,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending 3.000 stuk(s) vanaf 12 november 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 - 3000 | € 0,367 | € 1.101,00 |
| 6000 - 6000 | € 0,33 | € 990,00 |
| 9000 + | € 0,297 | € 891,00 |
*prijsindicatie
- RS-stocknr.:
- 261-3946
- Fabrikantnummer:
- BFP620FH7764XTSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 80mA | |
| Maximum Collector Emitter Voltage Vceo | 7.5V | |
| Package Type | TSFP-4-1 | |
| Mount Type | Surface | |
| Transistor Configuration | NPN | |
| Maximum Collector Base Voltage VCBO | 7.5V | |
| Maximum Transition Frequency ft | 65GHz | |
| Transistor Polarity | NPN | |
| Minimum Operating Temperature | -55°C | |
| Maximum Emitter Base Voltage VEBO | 1.2V | |
| Minimum DC Current Gain hFE | 110 | |
| Maximum Power Dissipation Pd | 185mW | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Length | 1.4mm | |
| Height | 0.55mm | |
| Standards/Approvals | RoHS | |
| Width | 1.2mm | |
| Series | BFP | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 80mA | ||
Maximum Collector Emitter Voltage Vceo 7.5V | ||
Package Type TSFP-4-1 | ||
Mount Type Surface | ||
Transistor Configuration NPN | ||
Maximum Collector Base Voltage VCBO 7.5V | ||
Maximum Transition Frequency ft 65GHz | ||
Transistor Polarity NPN | ||
Minimum Operating Temperature -55°C | ||
Maximum Emitter Base Voltage VEBO 1.2V | ||
Minimum DC Current Gain hFE 110 | ||
Maximum Power Dissipation Pd 185mW | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Length 1.4mm | ||
Height 0.55mm | ||
Standards/Approvals RoHS | ||
Width 1.2mm | ||
Series BFP | ||
Automotive Standard No | ||
The Infineon low profile high gain silicon NPN RF bipolar transistor, its high gain and low noise characteristics make the device suitable for frequencies as high as 6 GHz. It remains cost competitive without compromising on ease of use.
Low noise amplifiers in SDARS receivers
Low noise amplifiers for wireless communications
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