Infineon RF Bipolar Transistor, 45 mA NPN, 4.2 V, 4-Pin SOT-343
- RS-stocknr.:
- 273-7301
- Fabrikantnummer:
- BFP740ESDH6327XTSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
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€ 12,975
(excl. BTW)
€ 15,70
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
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- Plus verzending 825 stuk(s) vanaf 15 juni 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 25 | € 0,519 | € 12,98 |
| 50 - 75 | € 0,509 | € 12,73 |
| 100 - 225 | € 0,476 | € 11,90 |
| 250 - 975 | € 0,439 | € 10,98 |
| 1000 + | € 0,43 | € 10,75 |
*prijsindicatie
- RS-stocknr.:
- 273-7301
- Fabrikantnummer:
- BFP740ESDH6327XTSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 45mA | |
| Maximum Collector Emitter Voltage Vceo | 4.2V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Transistor Configuration | Npn Rf Heterojunction Bipolar Transistor (Hbt) | |
| Maximum Collector Base Voltage VCBO | 4.9V | |
| Transistor Polarity | NPN | |
| Maximum Power Dissipation Pd | 160mW | |
| Minimum Operating Temperature | -55°C | |
| Minimum DC Current Gain hFE | 160 | |
| Maximum Emitter Base Voltage VEBO | 0.5V | |
| Maximum Transition Frequency ft | 45GHz | |
| Pin Count | 4 | |
| Maximum Operating Temperature | 150°C | |
| Series | BFP740ESD | |
| Standards/Approvals | JEDEC47/20/22 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 45mA | ||
Maximum Collector Emitter Voltage Vceo 4.2V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Transistor Configuration Npn Rf Heterojunction Bipolar Transistor (Hbt) | ||
Maximum Collector Base Voltage VCBO 4.9V | ||
Transistor Polarity NPN | ||
Maximum Power Dissipation Pd 160mW | ||
Minimum Operating Temperature -55°C | ||
Minimum DC Current Gain hFE 160 | ||
Maximum Emitter Base Voltage VEBO 0.5V | ||
Maximum Transition Frequency ft 45GHz | ||
Pin Count 4 | ||
Maximum Operating Temperature 150°C | ||
Series BFP740ESD | ||
Standards/Approvals JEDEC47/20/22 | ||
Automotive Standard No | ||
The Infineon NPN RF bipolar transistor is a wideband NPN RF heterojunction bipolar transistor with an integrated ESD protection. It is suitable for multimedia applications such as portable TV, CATV and FM radio and ISM applications like RKE, AMR and ZigBee, as well as for emerging wireless applications.
High gain
Robustness
High end RF performance
Suitable for wireless communications
Suitable for satellite communication systems
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