Infineon RF Bipolar Transistor, 45 mA NPN, 4.2 V, 4-Pin SOT-343
- RS-stocknr.:
- 273-7301
- Fabrikantnummer:
- BFP740ESDH6327XTSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 25 eenheden)*
€ 12,975
(excl. BTW)
€ 15,70
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- 850 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 25 - 25 | € 0,519 | € 12,98 |
| 50 - 75 | € 0,509 | € 12,73 |
| 100 - 225 | € 0,476 | € 11,90 |
| 250 - 975 | € 0,439 | € 10,98 |
| 1000 + | € 0,43 | € 10,75 |
*prijsindicatie
- RS-stocknr.:
- 273-7301
- Fabrikantnummer:
- BFP740ESDH6327XTSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 45mA | |
| Maximum Collector Emitter Voltage Vceo | 4.2V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Transistor Configuration | Npn Rf Heterojunction Bipolar Transistor (Hbt) | |
| Maximum Collector Base Voltage VCBO | 4.9V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Transition Frequency ft | 45GHz | |
| Maximum Emitter Base Voltage VEBO | 0.5V | |
| Minimum DC Current Gain hFE | 160 | |
| Transistor Polarity | NPN | |
| Maximum Power Dissipation Pd | 160mW | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Standards/Approvals | JEDEC47/20/22 | |
| Series | BFP740ESD | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 45mA | ||
Maximum Collector Emitter Voltage Vceo 4.2V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Transistor Configuration Npn Rf Heterojunction Bipolar Transistor (Hbt) | ||
Maximum Collector Base Voltage VCBO 4.9V | ||
Minimum Operating Temperature -55°C | ||
Maximum Transition Frequency ft 45GHz | ||
Maximum Emitter Base Voltage VEBO 0.5V | ||
Minimum DC Current Gain hFE 160 | ||
Transistor Polarity NPN | ||
Maximum Power Dissipation Pd 160mW | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Standards/Approvals JEDEC47/20/22 | ||
Series BFP740ESD | ||
Automotive Standard No | ||
The Infineon NPN RF bipolar transistor is a wideband NPN RF heterojunction bipolar transistor with an integrated ESD protection. It is suitable for multimedia applications such as portable TV, CATV and FM radio and ISM applications like RKE, AMR and ZigBee, as well as for emerging wireless applications.
High gain
Robustness
High end RF performance
Suitable for wireless communications
Suitable for satellite communication systems
Gerelateerde Links
- Infineon BFP740ESDH6327XTSA1 RF Bipolar Transistor 4.2 V, 4-Pin SOT-343
- Infineon RF Bipolar Transistor 13 V, 4-Pin SOT-343
- Infineon BFP740FH6327XTSA1 RF Bipolar Transistor 13 V, 4-Pin SOT-343
- Infineon BFP740FESDH6327XTSA1 RF Bipolar Transistor 13 V, 4-Pin SOT-343
- Infineon RF Bipolar Transistor 12 V, 4-Pin SOT-343
- Infineon RF Bipolar Transistor 4 V, 4-Pin SOT-343
- Infineon RF Bipolar Transistor 20 V, 4-Pin SOT-343
- Infineon RF Bipolar Transistor 80 V, 4-Pin SOT-343
