Infineon BFP740ESDH6327XTSA1 RF Bipolar Transistor, 45 mA NPN, 4.2 V, 4-Pin SOT-343
- RS-stocknr.:
- 273-7299
- Fabrikantnummer:
- BFP740ESDH6327XTSA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 3000 eenheden)*
€ 756,00
(excl. BTW)
€ 915,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Tijdelijk niet op voorraad
- Verzending vanaf 25 september 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 3000 + | € 0,252 | € 756,00 |
*prijsindicatie
- RS-stocknr.:
- 273-7299
- Fabrikantnummer:
- BFP740ESDH6327XTSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | RF Bipolar Transistor | |
| Maximum DC Collector Current Idc | 45mA | |
| Maximum Collector Emitter Voltage Vceo | 4.2V | |
| Package Type | SOT-343 | |
| Mount Type | Surface | |
| Transistor Configuration | Npn Rf Heterojunction Bipolar Transistor (Hbt) | |
| Maximum Collector Base Voltage VCBO | 4.9V | |
| Minimum DC Current Gain hFE | 160 | |
| Maximum Transition Frequency ft | 45GHz | |
| Minimum Operating Temperature | -55°C | |
| Maximum Emitter Base Voltage VEBO | 0.5V | |
| Maximum Power Dissipation Pd | 160mW | |
| Transistor Polarity | NPN | |
| Maximum Operating Temperature | 150°C | |
| Pin Count | 4 | |
| Series | BFP740ESD | |
| Standards/Approvals | JEDEC47/20/22 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type RF Bipolar Transistor | ||
Maximum DC Collector Current Idc 45mA | ||
Maximum Collector Emitter Voltage Vceo 4.2V | ||
Package Type SOT-343 | ||
Mount Type Surface | ||
Transistor Configuration Npn Rf Heterojunction Bipolar Transistor (Hbt) | ||
Maximum Collector Base Voltage VCBO 4.9V | ||
Minimum DC Current Gain hFE 160 | ||
Maximum Transition Frequency ft 45GHz | ||
Minimum Operating Temperature -55°C | ||
Maximum Emitter Base Voltage VEBO 0.5V | ||
Maximum Power Dissipation Pd 160mW | ||
Transistor Polarity NPN | ||
Maximum Operating Temperature 150°C | ||
Pin Count 4 | ||
Series BFP740ESD | ||
Standards/Approvals JEDEC47/20/22 | ||
Automotive Standard No | ||
The Infineon NPN RF bipolar transistor is a wideband NPN RF heterojunction bipolar transistor with an integrated ESD protection. It is suitable for multimedia applications such as portable TV, CATV and FM radio and ISM applications like RKE, AMR and ZigBee, as well as for emerging wireless applications.
High gain
Robustness
High end RF performance
Suitable for wireless communications
Suitable for satellite communication systems
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