Infineon NOR 256 MB CFI Flash Memory 64-Pin BGA
- RS-stocknr.:
- 193-8866
- Fabrikantnummer:
- S29GL256P11FFIV20
- Fabrikant:
- Infineon
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- RS-stocknr.:
- 193-8866
- Fabrikantnummer:
- S29GL256P11FFIV20
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
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Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Memory Size | 256MB | |
| Product Type | Flash Memory | |
| Interface Type | CFI | |
| Package Type | BGA | |
| Pin Count | 64 | |
| Organisation | 32M x 8 Bit | |
| Mount Type | Surface | |
| Cell Type | NOR | |
| Maximum Supply Voltage | 3.6V | |
| Minimum Supply Voltage | 2.7V | |
| Timing Type | Asynchronous | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 85°C | |
| Length | 13mm | |
| Standards/Approvals | No | |
| Height | 1mm | |
| Width | 11 mm | |
| Automotive Standard | No | |
| Supply Current | 110mA | |
| Maximum Random Access Time | 110ns | |
| Number of Bits per Word | 8 | |
| Number of Words | 32M | |
| Series | S29GL256P | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Memory Size 256MB | ||
Product Type Flash Memory | ||
Interface Type CFI | ||
Package Type BGA | ||
Pin Count 64 | ||
Organisation 32M x 8 Bit | ||
Mount Type Surface | ||
Cell Type NOR | ||
Maximum Supply Voltage 3.6V | ||
Minimum Supply Voltage 2.7V | ||
Timing Type Asynchronous | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 85°C | ||
Length 13mm | ||
Standards/Approvals No | ||
Height 1mm | ||
Width 11 mm | ||
Automotive Standard No | ||
Supply Current 110mA | ||
Maximum Random Access Time 110ns | ||
Number of Bits per Word 8 | ||
Number of Words 32M | ||
Series S29GL256P | ||
The Cypress S29GL01G/512/256/128P are Mirrorbit® Flash products fabricated on 90 nm process technology. These devices offer a fast page access time of 25 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for todays embedded applications that require higher density, better performance and lower power consumption.
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