Infineon NOR 256 MB CFI Flash Memory 64-Pin BGA, S29GL256P11FFIV20
- RS-stocknr.:
- 193-8867
- Fabrikantnummer:
- S29GL256P11FFIV20
- Fabrikant:
- Infineon
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- RS-stocknr.:
- 193-8867
- Fabrikantnummer:
- S29GL256P11FFIV20
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
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Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | Flash Memory | |
| Memory Size | 256MB | |
| Interface Type | CFI | |
| Package Type | BGA | |
| Pin Count | 64 | |
| Organisation | 32M x 8 Bit | |
| Mount Type | Surface | |
| Cell Type | NOR | |
| Minimum Supply Voltage | 2.7V | |
| Maximum Supply Voltage | 3.6V | |
| Timing Type | Asynchronous | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 85°C | |
| Length | 13mm | |
| Height | 1mm | |
| Width | 11 mm | |
| Standards/Approvals | No | |
| Number of Words | 32M | |
| Series | S29GL256P | |
| Supply Current | 110mA | |
| Number of Bits per Word | 8 | |
| Maximum Random Access Time | 110ns | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type Flash Memory | ||
Memory Size 256MB | ||
Interface Type CFI | ||
Package Type BGA | ||
Pin Count 64 | ||
Organisation 32M x 8 Bit | ||
Mount Type Surface | ||
Cell Type NOR | ||
Minimum Supply Voltage 2.7V | ||
Maximum Supply Voltage 3.6V | ||
Timing Type Asynchronous | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 85°C | ||
Length 13mm | ||
Height 1mm | ||
Width 11 mm | ||
Standards/Approvals No | ||
Number of Words 32M | ||
Series S29GL256P | ||
Supply Current 110mA | ||
Number of Bits per Word 8 | ||
Maximum Random Access Time 110ns | ||
Automotive Standard No | ||
The Cypress S29GL01G/512/256/128P are Mirrorbit® Flash products fabricated on 90 nm process technology. These devices offer a fast page access time of 25 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for todays embedded applications that require higher density, better performance and lower power consumption.
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