Infineon 8 MB SPI FRAM 8-Pin SOIC, CY15B108QN-40SXI
- RS-stocknr.:
- 273-5268
- Fabrikantnummer:
- CY15B108QN-40SXI
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
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€ 20,33
(excl. BTW)
€ 24,60
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
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- Verzending vanaf 05 april 2027
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 20,33 |
| 10 - 24 | € 18,85 |
| 25 - 49 | € 18,18 |
| 50 + | € 17,38 |
*prijsindicatie
- RS-stocknr.:
- 273-5268
- Fabrikantnummer:
- CY15B108QN-40SXI
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Memory Size | 8MB | |
| Product Type | FRAM | |
| Organisation | 1M x 8 | |
| Interface Type | SPI | |
| Data Bus Width | 8bit | |
| Maximum Random Access Time | 0ns | |
| Mount Type | Surface | |
| Maximum Clock Frequency | 40MHz | |
| Package Type | SOIC | |
| Pin Count | 8 | |
| Width | 5.33mm | |
| Standards/Approvals | RoHS | |
| Length | 8.26mm | |
| Height | 2.03mm | |
| Maximum Operating Temperature | +85°C | |
| Automotive Standard | No | |
| Number of Words | 1048576 | |
| Minimum Supply Voltage | 1.80V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Supply Voltage | 3.6V | |
| Number of Bits per Word | 8 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Memory Size 8MB | ||
Product Type FRAM | ||
Organisation 1M x 8 | ||
Interface Type SPI | ||
Data Bus Width 8bit | ||
Maximum Random Access Time 0ns | ||
Mount Type Surface | ||
Maximum Clock Frequency 40MHz | ||
Package Type SOIC | ||
Pin Count 8 | ||
Width 5.33mm | ||
Standards/Approvals RoHS | ||
Length 8.26mm | ||
Height 2.03mm | ||
Maximum Operating Temperature +85°C | ||
Automotive Standard No | ||
Number of Words 1048576 | ||
Minimum Supply Voltage 1.80V | ||
Minimum Operating Temperature -40°C | ||
Maximum Supply Voltage 3.6V | ||
Number of Bits per Word 8 | ||
The Infineon FRAM Memory is a low power, 8 Mb non volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is non volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system level reliability problems caused by serial flash, EEPROM, and other non volatile memories.
RoHS compliant
Low voltage operation
Low power consumption
Fast serial peripheral interface
Dedicated 256 byte special sector FRAM
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