Infineon 1 MB Serial-I2C FRAM 8-Pin SOIC-8
- RS-stocknr.:
- 273-7383
- Fabrikantnummer:
- FM24VN10-G
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 11,80
(excl. BTW)
€ 14,28
(incl. BTW)
Voeg 7 eenheden toe voor gratis bezorging
Op voorraad
- Plus verzending 980 stuk(s) vanaf 12 februari 2026
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 11,80 |
| 10 - 24 | € 11,12 |
| 25 - 49 | € 10,82 |
| 50 - 99 | € 10,61 |
| 100 + | € 9,53 |
*prijsindicatie
- RS-stocknr.:
- 273-7383
- Fabrikantnummer:
- FM24VN10-G
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Memory Size | 1MB | |
| Product Type | FRAM | |
| Organisation | 128k x 8 bit | |
| Interface Type | Serial-I2C | |
| Data Bus Width | 8bit | |
| Maximum Clock Frequency | 3.4MHz | |
| Package Type | SOIC-8 | |
| Pin Count | 8 | |
| Standards/Approvals | RoHS | |
| Maximum Operating Temperature | 85°C | |
| Minimum Supply Voltage | 2V | |
| Minimum Operating Temperature | 40°C | |
| Number of Words | 128k | |
| Number of Bits per Word | 8 | |
| Maximum Supply Voltage | 3.6V | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Memory Size 1MB | ||
Product Type FRAM | ||
Organisation 128k x 8 bit | ||
Interface Type Serial-I2C | ||
Data Bus Width 8bit | ||
Maximum Clock Frequency 3.4MHz | ||
Package Type SOIC-8 | ||
Pin Count 8 | ||
Standards/Approvals RoHS | ||
Maximum Operating Temperature 85°C | ||
Minimum Supply Voltage 2V | ||
Minimum Operating Temperature 40°C | ||
Number of Words 128k | ||
Number of Bits per Word 8 | ||
Maximum Supply Voltage 3.6V | ||
Automotive Standard No | ||
The Infineon FRAM is a 1 Mbit non volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or FRAM is non volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system level reliability problems caused by EEPROM and other non volatile memories. Unlike EEPROM, it performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other non volatile memories.
RoHS compliant
Low power consumption
Fast 2 wire Serial interface
High endurance 100 trillion read and write
Advanced high reliability ferroelectric process
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