Infineon FF1MR12MM1HB11BPSA1 MOSFET Gate Driver 2, 420 A 23 V, AG-ECONOD
- RS-stocknr.:
- 351-898
- Fabrikantnummer:
- FF1MR12MM1HB11BPSA1
- Fabrikant:
- Infineon
Subtotaal (1 eenheid)*
€ 957,70
(excl. BTW)
€ 1.158,82
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
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- 10 stuk(s) klaar voor verzending vanaf een andere locatie
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Aantal stuks | Per stuk |
|---|---|
| 1 + | € 957,70 |
*prijsindicatie
- RS-stocknr.:
- 351-898
- Fabrikantnummer:
- FF1MR12MM1HB11BPSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | Gate Driver Module | |
| Output Current | 420A | |
| Fall Time | 77ns | |
| Package Type | AG-ECONOD | |
| Driver Type | MOSFET | |
| Rise Time | 261ns | |
| Minimum Supply Voltage | 10V | |
| Number of Drivers | 2 | |
| Maximum Supply Voltage | 23V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Series | FF1MR12MM1H_B11 | |
| Standards/Approvals | IEC 60749, IEC 60747, IEC 60068 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type Gate Driver Module | ||
Output Current 420A | ||
Fall Time 77ns | ||
Package Type AG-ECONOD | ||
Driver Type MOSFET | ||
Rise Time 261ns | ||
Minimum Supply Voltage 10V | ||
Number of Drivers 2 | ||
Maximum Supply Voltage 23V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Series FF1MR12MM1H_B11 | ||
Standards/Approvals IEC 60749, IEC 60747, IEC 60068 | ||
Automotive Standard No | ||
- Land van herkomst:
- HU
The Infineon EconoDUAL 3 CoolSiC MOSFET half bridge module 1200 V, 1.4 mΩ with enhanced generation 1, NTC and Press FIT contact technology. Also available with pre-applied Thermal Interface Material or with wave structure on the backside of the base plate for direct liquid cooling.
Low switching losses
Superior gate oxide reliability
Higher gate threshold voltage
Higher power output
Robust integrated body diode
High cosmic ray robustness
High speed switching module
Screw power terminals
Integrated NTC temperature sensor
Isolated baseplate
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