Infineon MOSFET Gate Driver 1, 8 A 13-Pin 3.5 V, TFLGA
- RS-stocknr.:
- 222-4760
- Fabrikantnummer:
- 1EDF5673KXUMA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 4000 eenheden)*
€ 4.376,00
(excl. BTW)
€ 5.296,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 28 april 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 4000 + | € 1,094 | € 4.376,00 |
*prijsindicatie
- RS-stocknr.:
- 222-4760
- Fabrikantnummer:
- 1EDF5673KXUMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | MOSFET | |
| Output Current | 8A | |
| Pin Count | 13 | |
| Fall Time | 19ns | |
| Package Type | TFLGA | |
| Number of Outputs | 2 | |
| Driver Type | MOSFET | |
| Rise Time | 6.5ns | |
| Minimum Supply Voltage | 4.2V | |
| Maximum Supply Voltage | 3.5V | |
| Number of Drivers | 1 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | No | |
| Length | 10.3mm | |
| Width | 7.5 mm | |
| Series | 1EDF5673F | |
| Height | 2.35mm | |
| Mount Type | Surface | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type MOSFET | ||
Output Current 8A | ||
Pin Count 13 | ||
Fall Time 19ns | ||
Package Type TFLGA | ||
Number of Outputs 2 | ||
Driver Type MOSFET | ||
Rise Time 6.5ns | ||
Minimum Supply Voltage 4.2V | ||
Maximum Supply Voltage 3.5V | ||
Number of Drivers 1 | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals No | ||
Length 10.3mm | ||
Width 7.5 mm | ||
Series 1EDF5673F | ||
Height 2.35mm | ||
Mount Type Surface | ||
Automotive Standard No | ||
The Infineon single-channel galvanic ally isolated gate driver IC 1EDF5673K is a perfect fit for enhancement mode (e-mode) gallium nitride (GaN) HEMTs with non-isolated gate (diode input characteristic) and low threshold voltage, such as CoolGaN™. It ensures robust and highly efficient high voltage GaN switch operation whilst concurrently minimizing R&D efforts and shortening time-to-market.
Low ohmic outputs
Single-channel galvanic isolation
Integrated galvanic isolation
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