Infineon MOSFET Gate Driver 2, 360 mA 8-Pin 600V, DSO
- RS-stocknr.:
- 226-6033P
- Fabrikantnummer:
- 2ED2304S06FXUMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal 75 eenheden (geleverd op een doorlopende strip)*
€ 57,375
(excl. BTW)
€ 69,45
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- 4.725 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk |
|---|---|
| 75 - 135 | € 0,765 |
| 150 - 360 | € 0,733 |
| 375 - 735 | € 0,701 |
| 750 + | € 0,653 |
*prijsindicatie
- RS-stocknr.:
- 226-6033P
- Fabrikantnummer:
- 2ED2304S06FXUMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | Gate Driver | |
| Output Current | 360mA | |
| Pin Count | 8 | |
| Package Type | DSO | |
| Fall Time | 40ns | |
| Driver Type | MOSFET | |
| Rise Time | 48ns | |
| Minimum Supply Voltage | 20V | |
| Number of Drivers | 2 | |
| Maximum Supply Voltage | 600V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Length | 5mm | |
| Standards/Approvals | RoHS | |
| Height | 1.75mm | |
| Series | 2ED2304S06F | |
| Mount Type | Surface | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type Gate Driver | ||
Output Current 360mA | ||
Pin Count 8 | ||
Package Type DSO | ||
Fall Time 40ns | ||
Driver Type MOSFET | ||
Rise Time 48ns | ||
Minimum Supply Voltage 20V | ||
Number of Drivers 2 | ||
Maximum Supply Voltage 600V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Length 5mm | ||
Standards/Approvals RoHS | ||
Height 1.75mm | ||
Series 2ED2304S06F | ||
Mount Type Surface | ||
Automotive Standard No | ||
The Infineon 2ED2304S06F is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. It is based on SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negative voltages of up to - 11 Von VS pin on transient voltage. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction.
Floating channel designed for bootstrap operation
Operating voltages (VS node) upto + 650 V
Maximum bootstrap voltage (VB node) of + 675 V
Integrated ultra-fast, low resistance bootstrap diode