Infineon 2ED21091S06FXUMA1, Gate Driver 2, 290 mA 8-Pin 20V, DSO-8
- RS-stocknr.:
- 258-0606
- Fabrikantnummer:
- 2ED21091S06FXUMA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
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€ 2,20
(excl. BTW)
€ 2,66
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 18 | € 1,10 | € 2,20 |
| 20 - 48 | € 1,03 | € 2,06 |
| 50 - 98 | € 0,97 | € 1,94 |
| 100 - 198 | € 0,90 | € 1,80 |
| 200 + | € 0,84 | € 1,68 |
*prijsindicatie
- RS-stocknr.:
- 258-0606
- Fabrikantnummer:
- 2ED21091S06FXUMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | Gate Driver | |
| Output Current | 290mA | |
| Pin Count | 8 | |
| Package Type | DSO-8 | |
| Fall Time | 35ns | |
| Driver Type | Gate Driver | |
| Rise Time | 100ns | |
| Minimum Supply Voltage | 10V | |
| Number of Drivers | 2 | |
| Maximum Supply Voltage | 20V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | RoHS | |
| Series | 2ED21091S6F | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type Gate Driver | ||
Output Current 290mA | ||
Pin Count 8 | ||
Package Type DSO-8 | ||
Fall Time 35ns | ||
Driver Type Gate Driver | ||
Rise Time 100ns | ||
Minimum Supply Voltage 10V | ||
Number of Drivers 2 | ||
Maximum Supply Voltage 20V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals RoHS | ||
Series 2ED21091S6F | ||
Automotive Standard No | ||
The Infineon 650 V half-bridge high speed power MOSFET and IGBT gate driver with typical 0.29 source current, and 0.7 sink current in DSO-8 package. Based on Infineon SOI-technology, having excellent ruggedness and noise immunity against negative transient voltages on VS pin. No parasitic thyristor structures present in the device, hence no parasitic latch up at all temperature and voltage conditions.
integrated ultra-fast, low resistance bootstrap diode, lower the BOM cost
Floating channel designed for bootstrap operation
Independent under voltage lockout for both channels
The dual function DT/SD input turns off both channels