Renesas Electronics HIP2100IBZT MOSFET Gate Driver, 2 A 8-Pin 14 V, SOIC-8
- RS-stocknr.:
- 263-6913
- Fabrikantnummer:
- HIP2100IBZT
- Fabrikant:
- Renesas Electronics
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 2 eenheden)*
€ 5,08
(excl. BTW)
€ 6,14
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Laatste voorraad RS
- Laatste 2.346 stuk(s), klaar voor verzending vanaf een andere locatie
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 48 | € 2,54 | € 5,08 |
| 50 - 98 | € 2,47 | € 4,94 |
| 100 - 248 | € 2,405 | € 4,81 |
| 250 - 998 | € 2,345 | € 4,69 |
| 1000 + | € 2,285 | € 4,57 |
*prijsindicatie
- RS-stocknr.:
- 263-6913
- Fabrikantnummer:
- HIP2100IBZT
- Fabrikant:
- Renesas Electronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Renesas Electronics | |
| Product Type | MOSFET | |
| Output Current | 2A | |
| Pin Count | 8 | |
| Package Type | SOIC-8 | |
| Fall Time | 10ns | |
| Driver Type | MOSFET | |
| Rise Time | 20ns | |
| Minimum Supply Voltage | 9V | |
| Maximum Supply Voltage | 14V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 125°C | |
| Standards/Approvals | RoHS | |
| Length | 4.98mm | |
| Height | 1.7mm | |
| Series | HIP2100 | |
| Width | 3.99 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Renesas Electronics | ||
Product Type MOSFET | ||
Output Current 2A | ||
Pin Count 8 | ||
Package Type SOIC-8 | ||
Fall Time 10ns | ||
Driver Type MOSFET | ||
Rise Time 20ns | ||
Minimum Supply Voltage 9V | ||
Maximum Supply Voltage 14V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 125°C | ||
Standards/Approvals RoHS | ||
Length 4.98mm | ||
Height 1.7mm | ||
Series HIP2100 | ||
Width 3.99 mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The Renesas Electronics low cost, high frequency half bridge N-Channel power MOSFET driver IC. The low-side and high-side gate drivers are independently controlled and matched to 8ns. This gives the user maximum flexibility in dead-time selection and driver protocol. Under voltage protection on both the low-side and high-side supplies force the outputs low.
Fast propagation times for multi-MHz circuits
CMOS input thresholds for improved noise immunity
Independent inputs for non half bridge topologies
No start up problems
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