IXYS MII100-12A3, Type N-Channel IGBT Module, 135 A 1200 V, 7-Pin Y4-M5, Surface

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€ 76,32

(excl. BTW)

€ 92,35

(incl. BTW)

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RS-stocknr.:
193-874
Fabrikantnummer:
MII100-12A3
Fabrikant:
IXYS
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Merk

IXYS

Maximum Continuous Collector Current Ic

135A

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

560W

Package Type

Y4-M5

Mount Type

Surface

Channel Type

Type N

Pin Count

7

Switching Speed

30kHz

Minimum Operating Temperature

-40°C

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Collector Emitter Saturation Voltage VceSAT

2.7V

Maximum Operating Temperature

150°C

Length

94mm

Standards/Approvals

No

Series

NPT

Height

30mm

Automotive Standard

No

IGBT Modules, IXYS


IGBT Discretes & Modules, IXYS


The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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