Infineon IKY150N65EH7XKSA1 Single Collector, Single Emitter, Single Gate IGBT, 160 A 650 V, 4-Pin

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RS-stocknr.:
285-022
Fabrikantnummer:
IKY150N65EH7XKSA1
Fabrikant:
Infineon
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Merk

Infineon

Maximum Continuous Collector Current

160 A

Maximum Collector Emitter Voltage

650 V

Maximum Gate Emitter Voltage

±20V

Number of Transistors

1

Maximum Power Dissipation

621 W

Package Type

PG-TO247-4-PLUS-NN5.1

Configuration

Single Collector, Single Emitter, Single Gate

Mounting Type

Through Hole

Channel Type

N

Pin Count

4

The Infineon IGBT introduces cutting edge trench technology, optimised for low saturation voltage and reduced switching losses. It is Ideal for demanding applications, providing robust performance in industrial settings. With its Advanced construction, the device efficiently manages large current loads while maintaining excellent thermal stability. This component is particularly suited for electric vehicle charging systems and industrial UPS solutions, ensuring reliability and security in critical applications.

Supports a maximum collector emitter voltage of 650 V

Handles up to 150 A continuous current

Features a soft and fast recovery antiparallel diode

Qualified for industrial applications per JEDEC standards

Easy integration with well defined PSpice models

Smooth switching behaviour enhances system efficiency

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