Infineon IKW75N65SS5XKSA1 IGBT Module, 75 A 650 V PG-TO-247
- RS-stocknr.:
- 249-6948
- Fabrikantnummer:
- IKW75N65SS5XKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 9,30
(excl. BTW)
€ 11,25
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Op voorraad
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Aantal stuks | Per stuk |
|---|---|
| 1 - 4 | € 9,30 |
| 5 - 9 | € 8,84 |
| 10 - 24 | € 8,46 |
| 25 - 49 | € 8,09 |
| 50 + | € 7,52 |
*prijsindicatie
- RS-stocknr.:
- 249-6948
- Fabrikantnummer:
- IKW75N65SS5XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Maximum Continuous Collector Current Ic | 75A | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 395W | |
| Package Type | PG-TO-247 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.35V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 ±30 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 41.9mm | |
| Height | 5.3mm | |
| Standards/Approvals | JEDEC | |
| Width | 16.3 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Maximum Continuous Collector Current Ic 75A | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 395W | ||
Package Type PG-TO-247 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.35V | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO ±20 ±30 V | ||
Maximum Operating Temperature 175°C | ||
Length 41.9mm | ||
Height 5.3mm | ||
Standards/Approvals JEDEC | ||
Width 16.3 mm | ||
Automotive Standard No | ||
The Infineon TRENCHSTOP 5S5 IGBT co-packed with full-rated 6th generation cool SiCTMS schottky barrier diode. Ultra-low switching losses due to the combination of TRENCHSTOPTM5 and CoolSiCTM technology. Benchmark efficiency in hard switching topologies. Plug-and-play replacement of pure silicon devices. Maximum junction temperature is 175°C
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