IXYS MIXA225PF1200TSF, Type N-Channel IGBT Module, 360 A 1200 V, 11-Pin SimBus F, PCB
- RS-stocknr.:
- 124-0710
- Fabrikantnummer:
- MIXA225PF1200TSF
- Fabrikant:
- IXYS
Bulkkorting beschikbaar
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€ 127,21
(excl. BTW)
€ 153,92
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
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- Verzending vanaf 11 juni 2026
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Aantal stuks | Per stuk |
|---|---|
| 1 - 4 | € 127,21 |
| 5 - 9 | € 123,90 |
| 10 - 24 | € 120,71 |
| 25 + | € 117,68 |
*prijsindicatie
- RS-stocknr.:
- 124-0710
- Fabrikantnummer:
- MIXA225PF1200TSF
- Fabrikant:
- IXYS
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | IXYS | |
| Product Type | IGBT Module | |
| Maximum Continuous Collector Current Ic | 360A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Number of Transistors | 2 | |
| Maximum Power Dissipation Pd | 1100W | |
| Package Type | SimBus F | |
| Mount Type | PCB | |
| Channel Type | Type N | |
| Pin Count | 11 | |
| Minimum Operating Temperature | 150°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.8V | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Maximum Operating Temperature | -40°C | |
| Height | 17mm | |
| Series | MIXA225PF1200TSF | |
| Standards/Approvals | No | |
| Length | 152mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk IXYS | ||
Product Type IGBT Module | ||
Maximum Continuous Collector Current Ic 360A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Number of Transistors 2 | ||
Maximum Power Dissipation Pd 1100W | ||
Package Type SimBus F | ||
Mount Type PCB | ||
Channel Type Type N | ||
Pin Count 11 | ||
Minimum Operating Temperature 150°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.8V | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Maximum Operating Temperature -40°C | ||
Height 17mm | ||
Series MIXA225PF1200TSF | ||
Standards/Approvals No | ||
Length 152mm | ||
Automotive Standard No | ||
IGBT Modules, IXYS
IGBT Discretes & Modules, IXYS
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.