- RS-stocknr.:
- 168-8939
- Fabrikantnummer:
- STGP10M65DF2
- Fabrikant:
- STMicroelectronics
50 op voorraad - levertijd is 1 werkdag(en).
Toegevoegd
Prijs Elk (in eentube van 50)
€ 1,078
(excl. BTW)
€ 1,304
(incl. BTW)
Aantal stuks | Per stuk | Per tube* |
50 - 50 | € 1,078 | € 53,90 |
100 - 200 | € 1,024 | € 51,20 |
250 - 450 | € 0,921 | € 46,05 |
500 + | € 0,916 | € 45,80 |
*prijsindicatie |
- RS-stocknr.:
- 168-8939
- Fabrikantnummer:
- STGP10M65DF2
- Fabrikant:
- STMicroelectronics
Wetgeving en compliance
- Land van herkomst:
- CN
Productomschrijving
IGBT Discretes, STMicroelectronics
IGBT Discretes & Modules, STMicroelectronics
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Specificaties
Kenmerk | Waarde |
---|---|
Maximum Continuous Collector Current | 20 A |
Maximum Collector Emitter Voltage | 650 V |
Maximum Gate Emitter Voltage | ±20V |
Maximum Power Dissipation | 115 W |
Package Type | TO-220 |
Mounting Type | Through Hole |
Channel Type | N |
Pin Count | 3 |
Transistor Configuration | Single |
Dimensions | 10.4 x 4.6 x 15.75mm |
Minimum Operating Temperature | -55 °C |
Maximum Operating Temperature | +175 °C |
Gate Capacitance | 840pF |
Energy Rating | 0.66mJ |