STMicroelectronics STGWT20H65FB, Type N-Channel Trench Gate Field Stop IGBT, 40 A 650 V, 3-Pin TO, Through Hole

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€ 5,66

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€ 6,84

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2 - 8€ 2,83€ 5,66
10 - 18€ 2,735€ 5,47
20 - 48€ 2,665€ 5,33
50 - 98€ 2,60€ 5,20
100 +€ 2,53€ 5,06

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Verpakkingsopties
RS-stocknr.:
192-4809
Fabrikantnummer:
STGWT20H65FB
Fabrikant:
STMicroelectronics
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Merk

STMicroelectronics

Product Type

Trench Gate Field Stop IGBT

Maximum Continuous Collector Current Ic

40A

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

168W

Package Type

TO

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Maximum Gate Emitter Voltage VGEO

±20 V

Minimum Operating Temperature

-55°C

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Maximum Operating Temperature

175°C

Series

HB

Standards/Approvals

RoHS

Automotive Standard

No

Land van herkomst:
KR
These devices are IGBTs developed using an advanced proprietary trench gate and field-stop structure. The device is part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of any frequency converter. Furthermore, a slightly positive VCE(sat)temperature coefficient and very tight parameter distribution result in safer paralleling operation.

Maximum junction temperature: TJ= 175 °C

High speed switching series

Minimized tail current

VCE(sat)= 1.55 V (typ.) @ IC= 20 A

Tight parameters distribution

Safe paralleling

Low thermal resistance

Lead free package

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