Specificaties

Datasheets

Wetgeving en compliance

Productomschrijving

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Alles selecteren	Attribuut	Waarde
	Merk	onsemi
	Product Type	IGBT
	Maximum Continuous Collector Current Ic	40A
	Maximum Collector Emitter Voltage Vceo	1200V
	Maximum Power Dissipation Pd	227W
	Package Type	TO-247
	Mount Type	Through Hole
	Channel Type	Type P
	Pin Count	4
	Maximum Gate Emitter Voltage VGEO	±30 V
	Maximum Collector Emitter Saturation Voltage VceSAT	1.78V
	Minimum Operating Temperature	-55°C
	Maximum Operating Temperature	175°C
	Standards/Approvals	RoHS
	Series	Field Stop
	Automotive Standard	No

	Alles selecteren
	Merk onsemi
	Product Type IGBT
	Maximum Continuous Collector Current Ic 40A
	Maximum Collector Emitter Voltage Vceo 1200V
	Maximum Power Dissipation Pd 227W
	Package Type TO-247
	Mount Type Through Hole
	Channel Type Type P
	Pin Count 4
	Maximum Gate Emitter Voltage VGEO ±30 V
	Maximum Collector Emitter Saturation Voltage VceSAT 1.78V
	Minimum Operating Temperature -55°C
	Maximum Operating Temperature 175°C
	Standards/Approvals RoHS
	Series Field Stop
	Automotive Standard No

Land van herkomst:: CN

This Insulated Gate Bipolar Transistor (IGBT) features a robust and cost effective Ultra Field Stop Trench construction, and provides superior performance in demanding switching applications, offering both low on−state voltage and minimal switching loss. The IGBT is well suited for UPS and solar applications. Incorporated into the device is a soft and fast co−packaged free wheeling diode with a low forward voltage.

Extremely Efficient Trench with Field Stop Technology • TJmax = 175°C • Soft Fast Reverse Recovery Diode • Optimized for High Speed Switching • These are Pb−Free Devices

Applications

Solar inverter UPS Welding

onsemi, Type P-Channel IGBT, 40 A 1200 V, 4-Pin TO-247, Through Hole

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