onsemi, Type N-Channel IGBT, 40 A 1200 V, 3-Pin TO-247, Through Hole
- RS-stocknr.:
- 864-8855P
- Fabrikantnummer:
- FGH40T120SMD
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
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€ 73,90
(excl. BTW)
€ 89,40
(incl. BTW)
Voeg 11 eenheden toe voor gratis bezorging
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- Plus verzending 6 stuk(s) vanaf 23 februari 2026
- Plus verzending 450 stuk(s) vanaf 01 april 2026
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Aantal stuks | Per stuk |
|---|---|
| 10 - 99 | € 7,39 |
| 100 - 249 | € 6,11 |
| 250 - 499 | € 5,77 |
| 500 + | € 5,40 |
*prijsindicatie
- RS-stocknr.:
- 864-8855P
- Fabrikantnummer:
- FGH40T120SMD
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 40A | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Maximum Power Dissipation Pd | 555W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.8V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | ±25 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Series | Field Stop | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 40A | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Maximum Power Dissipation Pd 555W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.8V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO ±25 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Series Field Stop | ||
Automotive Standard No | ||
Discrete IGBTs, 1000V and over, Fairchild Semiconductor
IGBT Discretes & Modules, Fairchild Semiconductor
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
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