STMicroelectronics, Type N-Channel IGBT, 50 A 650 V, 3-Pin TO-247 LL, Through Hole
- RS-stocknr.:
- 201-4417
- Fabrikantnummer:
- STGWA30HP65FB2
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 tube van 30 eenheden)*
€ 51,99
(excl. BTW)
€ 62,91
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- 390 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 30 - 90 | € 1,733 | € 51,99 |
| 120 - 240 | € 1,712 | € 51,36 |
| 270 - 480 | € 1,691 | € 50,73 |
| 510 - 990 | € 1,67 | € 50,10 |
| 1020 + | € 1,65 | € 49,50 |
*prijsindicatie
- RS-stocknr.:
- 201-4417
- Fabrikantnummer:
- STGWA30HP65FB2
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Maximum Continuous Collector Current Ic | 50A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 167W | |
| Package Type | TO-247 LL | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.1V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Length | 15.9mm | |
| Height | 5.1mm | |
| Series | STG | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Maximum Continuous Collector Current Ic 50A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 167W | ||
Package Type TO-247 LL | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.1V | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Length 15.9mm | ||
Height 5.1mm | ||
Series STG | ||
Automotive Standard No | ||
The STMicroelectronics trench gate field-stop, 650 V, 30 A, high-speed HB2 series IGBT in a TO-247 long leads package, has a positive VCE(sat) temperature coefficient.
Minimized tail current
Tight parameter distribution
Low thermal resistance
Gerelateerde Links
- STMicroelectronics STGWA30HP65FB2 50 A 650 V Through Hole
- STMicroelectronics 50 A 650 V Through Hole
- STMicroelectronics STGWA30H65DFB2 50 A 650 V Through Hole
- STMicroelectronics STGWA30M65DF2AG IGBT 3-Pin TO-247 LL, Through Hole
- STMicroelectronics 3-Pin TO-247, Through Hole
- STMicroelectronics STGWA20HP65FB2 40 A 650 V, 3-Pin TO-247
- STMicroelectronics STGWA40H65DFB2 40 A 650 V, 3-Pin TO-247
- STMicroelectronics STGW80H65DFB 3-Pin TO-247, Through Hole