STMicroelectronics, Type N-Channel IGBT, 86 A 650 V, 3-Pin TO-247, Through Hole
- RS-stocknr.:
- 204-3943
- Fabrikantnummer:
- STGWA50HP65FB2
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Subtotaal (1 tube van 30 eenheden)*
€ 52,20
(excl. BTW)
€ 63,30
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- 570 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 30 - 90 | € 1,74 | € 52,20 |
| 120 - 240 | € 1,444 | € 43,32 |
| 270 - 480 | € 1,406 | € 42,18 |
| 510 - 990 | € 1,369 | € 41,07 |
| 1020 + | € 1,336 | € 40,08 |
*prijsindicatie
- RS-stocknr.:
- 204-3943
- Fabrikantnummer:
- STGWA50HP65FB2
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Maximum Continuous Collector Current Ic | 86A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 272W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Switching Speed | 1MHz | |
| Minimum Operating Temperature | -55°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.9mm | |
| Width | 21.1 mm | |
| Standards/Approvals | RoHS | |
| Series | STG | |
| Height | 5.1mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Maximum Continuous Collector Current Ic 86A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 272W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Switching Speed 1MHz | ||
Minimum Operating Temperature -55°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Length 15.9mm | ||
Width 21.1 mm | ||
Standards/Approvals RoHS | ||
Series STG | ||
Height 5.1mm | ||
Automotive Standard No | ||
- Land van herkomst:
- CN
The STMicroelectronics HB2 series 650 V IGBT represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy. A diode used for protection purposes only is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.
Maximum junction temperature of 175°C
Co-packaged protection diode
Minimized tail current
Tight parameter distribution
Low thermal resistance
Positive temperature coefficient
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