STMicroelectronics STGWA50HP65FB2, Type N-Channel IGBT, 86 A 650 V, 3-Pin TO-247, Through Hole

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€ 14,54

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€ 17,595

(incl. BTW)

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RS-stocknr.:
204-3944
Fabrikantnummer:
STGWA50HP65FB2
Fabrikant:
STMicroelectronics
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STMicroelectronics

Product Type

IGBT

Maximum Continuous Collector Current Ic

86A

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

272W

Package Type

TO-247

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Switching Speed

1MHz

Maximum Collector Emitter Saturation Voltage VceSAT

2V

Maximum Gate Emitter Voltage VGEO

20 V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Standards/Approvals

RoHS

Height

5.1mm

Length

15.9mm

Series

STG

Width

21.1 mm

Automotive Standard

No

Land van herkomst:
CN
The STMicroelectronics HB2 series 650 V IGBT represents an evolution of the advanced proprietary trench gate field-stop structure. The performance of the HB2 series is optimized in terms of conduction, thanks to a better VCE(sat) behaviour at low current values, as well as in terms of reduced switching energy. A diode used for protection purposes only is co-packaged in antiparallel with the IGBT. The result is a product specifically designed to maximize efficiency for a wide range of fast applications.

Maximum junction temperature of 175°C

Co-packaged protection diode

Minimized tail current

Tight parameter distribution

Low thermal resistance

Positive temperature coefficient

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