onsemi AFGHL75T65SQDC, N-Channel IGBT, 75 A 650 V, 3-Pin TO-247, Through Hole
- RS-stocknr.:
- 214-8784
- Fabrikantnummer:
- AFGHL75T65SQDC
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
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€ 10,85
(excl. BTW)
€ 13,13
(incl. BTW)
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- Plus verzending 280 stuk(s) vanaf 21 september 2026
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 10,85 |
| 10 + | € 9,35 |
*prijsindicatie
- RS-stocknr.:
- 214-8784
- Fabrikantnummer:
- AFGHL75T65SQDC
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 75A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 375W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | N | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V | |
| Maximum Operating Temperature | 175°C | |
| Series | Trench | |
| Standards/Approvals | PPAP capable, AEC-Q101 | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 75A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 375W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type N | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.6V | ||
Maximum Operating Temperature 175°C | ||
Series Trench | ||
Standards/Approvals PPAP capable, AEC-Q101 | ||
Automotive Standard AEC-Q101 | ||
The ON Semiconductor AFGHL series is IGBT which offers the optimum performance with both low conduction and switching losses for high efficiency operations in various applications, which does not require reverse recovery specification.
High current capability
Fast switching
Tight parameter distribution
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