Infineon AIGW50N65F5XKSA1 IGBT Single Transistor IC, 80 A 650 V, 3-Pin TO-247, Through Hole
- RS-stocknr.:
- 215-6611
- Fabrikantnummer:
- AIGW50N65F5XKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
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€ 11,62
(excl. BTW)
€ 14,06
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
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- Verzending vanaf 04 september 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 8 | € 5,81 | € 11,62 |
| 10 - 18 | € 5,52 | € 11,04 |
| 20 - 48 | € 5,05 | € 10,10 |
| 50 - 98 | € 4,355 | € 8,71 |
| 100 + | € 3,54 | € 7,08 |
*prijsindicatie
- RS-stocknr.:
- 215-6611
- Fabrikantnummer:
- AIGW50N65F5XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Maximum Continuous Collector Current Ic | 80A | |
| Product Type | IGBT Single Transistor IC | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 270W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | ±30 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.66V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | AEC-Q101 | |
| Series | High Speed Fifth Generation | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Maximum Continuous Collector Current Ic 80A | ||
Product Type IGBT Single Transistor IC | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 270W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO ±30 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.66V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals AEC-Q101 | ||
Series High Speed Fifth Generation | ||
Automotive Standard AEC-Q101 | ||
The Infineon three pin high speed fast insulated-gate bipolar transistor.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
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