Infineon, Type N-Channel IGBT Single Transistor IC, 40 A 600 V, 3-Pin TO-247, Through Hole
- RS-stocknr.:
- 215-6612
- Fabrikantnummer:
- AIKW20N60CTXKSA1
- Fabrikant:
- Infineon
Subtotaal (1 tube van 30 eenheden)*
€ 129,90
(excl. BTW)
€ 157,20
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 30 + | € 4,33 | € 129,90 |
*prijsindicatie
- RS-stocknr.:
- 215-6612
- Fabrikantnummer:
- AIKW20N60CTXKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | IGBT Single Transistor IC | |
| Maximum Continuous Collector Current Ic | 40A | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 166W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.5V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | No | |
| Series | TrenchStop | |
| Length | 42mm | |
| Height | 5.21mm | |
| Automotive Standard | AEC-Q101 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type IGBT Single Transistor IC | ||
Maximum Continuous Collector Current Ic 40A | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 166W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.5V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals No | ||
Series TrenchStop | ||
Length 42mm | ||
Height 5.21mm | ||
Automotive Standard AEC-Q101 | ||
The Infineon insulated-gate bipolar transistor with fast recovery antiparallel emitter controlled diode.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference
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