Infineon IKQ120N60TXKSA1 Single IGBT, 160 A 600 V, 3-Pin PG-TO247
- RS-stocknr.:
- 226-6108
- Fabrikantnummer:
- IKQ120N60TXKSA1
- Fabrikant:
- Infineon
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- RS-stocknr.:
- 226-6108
- Fabrikantnummer:
- IKQ120N60TXKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Maximum Continuous Collector Current | 160 A | |
| Maximum Collector Emitter Voltage | 600 V | |
| Maximum Gate Emitter Voltage | 20V | |
| Number of Transistors | 1 | |
| Maximum Power Dissipation | 833 W | |
| Configuration | Single | |
| Package Type | PG-TO247 | |
| Channel Type | N | |
| Pin Count | 3 | |
| Transistor Configuration | Single | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Maximum Continuous Collector Current 160 A | ||
Maximum Collector Emitter Voltage 600 V | ||
Maximum Gate Emitter Voltage 20V | ||
Number of Transistors 1 | ||
Maximum Power Dissipation 833 W | ||
Configuration Single | ||
Package Type PG-TO247 | ||
Channel Type N | ||
Pin Count 3 | ||
Transistor Configuration Single | ||
The Infineon IKQ120N60T has 600 V hard switching IGBT discrete with anti-parallel diode used higher system power density Ic which increase keeping the same system thermal performance and It has higher reliability with extended lifetime of the device.
35% bigger active thermal pad area for up to 20% lower thermal resistance R th(jh)
Extended creepage distance of 4.25 mm – 2 mm bigger than TO-247
Extended creepage distance of 4.25 mm – 2 mm bigger than TO-247
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