Infineon IKQ100N60TXKSA1, Type N-Channel IGBT, 160 A 600 V, 3-Pin TO-247, Through Hole
- RS-stocknr.:
- 215-6665
- Fabrikantnummer:
- IKQ100N60TXKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 8,30
(excl. BTW)
€ 10,04
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk |
|---|---|
| 1 - 4 | € 8,30 |
| 5 - 9 | € 7,64 |
| 10 - 24 | € 7,14 |
| 25 - 49 | € 6,73 |
| 50 + | € 6,14 |
*prijsindicatie
- RS-stocknr.:
- 215-6665
- Fabrikantnummer:
- IKQ100N60TXKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 160A | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 714W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.5V | |
| Maximum Operating Temperature | 175°C | |
| Height | 5.1mm | |
| Length | 41.2mm | |
| Series | TrenchStop | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 160A | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 714W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.5V | ||
Maximum Operating Temperature 175°C | ||
Height 5.1mm | ||
Length 41.2mm | ||
Series TrenchStop | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The Infineon insulated-gate bipolar transistor with positive temperature coefficient in saturation voltage has fast recovery anti-parallel emitter controlled diode.
High Efficiency
Low Switching Losses
Increased Reliability
Low Electromagnetic Interference