Infineon, Type N-Channel IGBT, 62 A 650 V, 3-Pin TO-220, Through Hole

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We weten niet of dit item nog op voorraad komt, RS is van plan dit binnenkort uit ons assortiment te halen.
RS-stocknr.:
226-6104
Fabrikantnummer:
IKP39N65ES5XKSA1
Fabrikant:
Infineon
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Merk

Infineon

Maximum Continuous Collector Current Ic

62A

Product Type

IGBT

Maximum Collector Emitter Voltage Vceo

650V

Maximum Power Dissipation Pd

188W

Package Type

TO-220

Mount Type

Through Hole

Channel Type

Type N

Pin Count

3

Maximum Collector Emitter Saturation Voltage VceSAT

1.85V

Maximum Gate Emitter Voltage VGEO

30 V

Minimum Operating Temperature

-40°C

Maximum Operating Temperature

175°C

Series

IKP39N65ES5

Standards/Approvals

RoHS

Automotive Standard

No

The Infineon IKP39N65ES5 has highest power density in TO-220 footprint and no need for gate clamping component. In this soft current fall characteristics with no tail current and it is excellent for paralleling.

Very low VCEsat of 1.45 V at 25°C

4 times Ic pulse current (100°C Tc)

Maximum junction temperature Tvj 175°C

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