Infineon, Type N-Channel IGBT, 18 A 650 V, 3-Pin TO-220, Through Hole
- RS-stocknr.:
- 273-2972
- Fabrikantnummer:
- IKP08N65H5XKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 verpakking van 2 eenheden)*
€ 4,03
(excl. BTW)
€ 4,876
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
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- Plus verzending 442 stuk(s) vanaf 04 juni 2026
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 8 | € 2,015 | € 4,03 |
| 10 - 18 | € 1,825 | € 3,65 |
| 20 - 98 | € 1,805 | € 3,61 |
| 100 - 248 | € 1,465 | € 2,93 |
| 250 + | € 1,46 | € 2,92 |
*prijsindicatie
- RS-stocknr.:
- 273-2972
- Fabrikantnummer:
- IKP08N65H5XKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Maximum Continuous Collector Current Ic | 18A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 70W | |
| Package Type | TO-220 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.1V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Operating Temperature | 175°C | |
| Series | TrenchStop | |
| Standards/Approvals | JEDEC, RoHS | |
| Height | 4.57mm | |
| Length | 15.95mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Maximum Continuous Collector Current Ic 18A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 70W | ||
Package Type TO-220 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.1V | ||
Minimum Operating Temperature -40°C | ||
Maximum Operating Temperature 175°C | ||
Series TrenchStop | ||
Standards/Approvals JEDEC, RoHS | ||
Height 4.57mm | ||
Length 15.95mm | ||
Automotive Standard No | ||
The Infineon IGBT in a TO-220 package compacted with fast and soft RAPID 1 anti parallel diode.
650 V breakthrough voltage
Mild positive temperature coefficient
Higher power density design
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