Infineon IKW40N65F5FKSA1, Type N-Channel IGBT, 74 A 650 V, 3-Pin TO-247, Through Hole
- RS-stocknr.:
- 226-6115
- Fabrikantnummer:
- IKW40N65F5FKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 5 eenheden)*
€ 15,72
(excl. BTW)
€ 19,02
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- 640 stuk(s) klaar voor verzending vanaf een andere locatie
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 5 - 20 | € 3,144 | € 15,72 |
| 25 - 45 | € 2,988 | € 14,94 |
| 50 - 120 | € 2,86 | € 14,30 |
| 125 - 245 | € 2,736 | € 13,68 |
| 250 + | € 2,546 | € 12,73 |
*prijsindicatie
- RS-stocknr.:
- 226-6115
- Fabrikantnummer:
- IKW40N65F5FKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Maximum Continuous Collector Current Ic | 74A | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 255W | |
| Package Type | TO-247 | |
| Mount Type | Through Hole | |
| Channel Type | Type N | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.6V | |
| Maximum Gate Emitter Voltage VGEO | 30 V | |
| Maximum Operating Temperature | 150°C | |
| Series | High Speed Fifth Generation | |
| Length | 42mm | |
| Standards/Approvals | RoHS | |
| Height | 5.21mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Maximum Continuous Collector Current Ic 74A | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 255W | ||
Package Type TO-247 | ||
Mount Type Through Hole | ||
Channel Type Type N | ||
Pin Count 3 | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.6V | ||
Maximum Gate Emitter Voltage VGEO 30 V | ||
Maximum Operating Temperature 150°C | ||
Series High Speed Fifth Generation | ||
Length 42mm | ||
Standards/Approvals RoHS | ||
Height 5.21mm | ||
Automotive Standard No | ||
The Infineon IKW40N65F5 is 650 V high speed hard switching IGBT which used co-packed with rapid si-diode technology. It has higher power density design and has low COES/EOSS.
Factor 2.5 lower Qg
Factor 2 reduction in switching losses
200mV reduction in VCEsat
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