onsemi IGBT 650 V, 3-Pin TO-247-3L, Surface
- RS-stocknr.:
- 241-0735
- Fabrikantnummer:
- FGHL75T65LQDT
- Fabrikant:
- onsemi
Subtotaal (1 tube van 450 eenheden)*
€ 1.968,75
(excl. BTW)
€ 2.382,30
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 29 juni 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 450 + | € 4,375 | € 1.968,75 |
*prijsindicatie
- RS-stocknr.:
- 241-0735
- Fabrikantnummer:
- FGHL75T65LQDT
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 469W | |
| Package Type | TO-247-3L | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Operating Temperature | 175°C | |
| Width | 20.82 mm | |
| Length | 15.87mm | |
| Standards/Approvals | RoHS | |
| Series | FGHL75T65LQDT | |
| Height | 4.82mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 469W | ||
Package Type TO-247-3L | ||
Mount Type Surface | ||
Pin Count 3 | ||
Minimum Operating Temperature -55°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Operating Temperature 175°C | ||
Width 20.82 mm | ||
Length 15.87mm | ||
Standards/Approvals RoHS | ||
Series FGHL75T65LQDT | ||
Height 4.82mm | ||
Automotive Standard No | ||
The ON Semiconductor 650 V, 75 A FS4 low Vce(sat) IGBT. This offer the optimum performance by balancing Vce(sat) and Eoff losses and well controllable turnoff Vce overshoot. Well suited for solar inverter, UPS, EV charging stations, ESS and other high performance power conversion applications.
Positive temperature co-efficient
Easy paralleling operation
Low conduction losses
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