onsemi FGHL75T65MQDT IGBT 650 V, 3-Pin TO-247-3L, Surface
- RS-stocknr.:
- 241-0740
- Fabrikantnummer:
- FGHL75T65MQDT
- Fabrikant:
- onsemi
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 5,24
(excl. BTW)
€ 6,34
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
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- Plus verzending 179 stuk(s) vanaf 16 maart 2026
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 5,24 |
| 10 - 99 | € 4,52 |
| 100 + | € 3,92 |
*prijsindicatie
- RS-stocknr.:
- 241-0740
- Fabrikantnummer:
- FGHL75T65MQDT
- Fabrikant:
- onsemi
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | onsemi | |
| Product Type | IGBT | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 375W | |
| Package Type | TO-247-3L | |
| Mount Type | Surface | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Length | 15.87mm | |
| Series | FGHL75T65MQDT | |
| Height | 4.82mm | |
| Standards/Approvals | RoHS | |
| Width | 20.82 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk onsemi | ||
Product Type IGBT | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 375W | ||
Package Type TO-247-3L | ||
Mount Type Surface | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Length 15.87mm | ||
Series FGHL75T65MQDT | ||
Height 4.82mm | ||
Standards/Approvals RoHS | ||
Width 20.82 mm | ||
Automotive Standard No | ||
The ON Semiconductor 650 V, 75 A FS4 medium switching speed IGBT. This offer the optimum performance by balancing Vce(sat) and Eoff losses and well controllable turnoff Vce overshoot. Well suited for solar inverter, UPS, EV charging stations, ESS and other high performance power conversion applications.
Positive temperature co-efficient
Easy paralleling operation
Low switching losses
Low conduction losses
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