Infineon IGP15N60TXKSA1 Low Loss IGBT, 15 A 600 V TO-220
- RS-stocknr.:
- 242-0976
- Fabrikantnummer:
- IGP15N60TXKSA1
- Fabrikant:
- Infineon
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Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 8 | € 0,83 | € 1,66 |
| 10 - 18 | € 0,785 | € 1,57 |
| 20 - 48 | € 0,715 | € 1,43 |
| 50 - 98 | € 0,64 | € 1,28 |
| 100 + | € 0,60 | € 1,20 |
*prijsindicatie
- RS-stocknr.:
- 242-0976
- Fabrikantnummer:
- IGP15N60TXKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Maximum Continuous Collector Current Ic | 15A | |
| Product Type | Low Loss IGBT | |
| Maximum Collector Emitter Voltage Vceo | 600V | |
| Maximum Power Dissipation Pd | 130W | |
| Package Type | TO-220 | |
| Maximum Gate Emitter Voltage VGEO | ±20 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.5V | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC1 | |
| Series | TRENCHSTOPTM | |
| Height | 4.57mm | |
| Length | 29.95mm | |
| Width | 10.36 mm | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Maximum Continuous Collector Current Ic 15A | ||
Product Type Low Loss IGBT | ||
Maximum Collector Emitter Voltage Vceo 600V | ||
Maximum Power Dissipation Pd 130W | ||
Package Type TO-220 | ||
Maximum Gate Emitter Voltage VGEO ±20 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.5V | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC1 | ||
Series TRENCHSTOPTM | ||
Height 4.57mm | ||
Length 29.95mm | ||
Width 10.36 mm | ||
Automotive Standard No | ||
The Infineon 600 V, 15 A IGBTs transistor has maximum continous collector current is 26 A.The maximum junction temperature is 175°C. It has highest efficiency,low conduction and switching losses,comprehensive portfolio in 600 V and 1200 V for flexibility of design and high device reliability.
Very soft, fast recovery anti-parallel emitter controlled diode
High ruggedness, temperature stable behavior
Low EMI emissions
Low gate charge
Very tight parameter distribution
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