Infineon FS150R12KT3BOSA1 IGBT Module, 200 A 1200 V
- RS-stocknr.:
- 244-5403
- Fabrikantnummer:
- FS150R12KT3BOSA1
- Fabrikant:
- Infineon
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- RS-stocknr.:
- 244-5403
- Fabrikantnummer:
- FS150R12KT3BOSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Maximum Continuous Collector Current | 200 A | |
| Maximum Collector Emitter Voltage | 1200 V | |
| Maximum Gate Emitter Voltage | +/-20V | |
| Number of Transistors | 6 | |
| Maximum Power Dissipation | 700 W | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Maximum Continuous Collector Current 200 A | ||
Maximum Collector Emitter Voltage 1200 V | ||
Maximum Gate Emitter Voltage +/-20V | ||
Number of Transistors 6 | ||
Maximum Power Dissipation 700 W | ||
The infineon IGBT module the maximum rated repetitive peak collector current is 300 A and collector-emitter saturation voltag 2.15 V, gate threshold voltage is 6.5 V.
Collector-emitter cut-off current 5.0 mA
Temperature under switching conditions 125° C
Gate-emitter leakage current 400 nA
Reverse transfer capacitance 0.40 nF
Temperature under switching conditions 125° C
Gate-emitter leakage current 400 nA
Reverse transfer capacitance 0.40 nF
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