Infineon FS150R12KT3BOSA1 IGBT Module, 200 A 1200 V EconoPACKTM3

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Verpakkingsopties
RS-stocknr.:
244-5404
Fabrikantnummer:
FS150R12KT3BOSA1
Fabrikant:
Infineon
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Merk

Infineon

Maximum Continuous Collector Current Ic

200A

Product Type

IGBT Module

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

700W

Number of Transistors

6

Package Type

EconoPACKTM3

Maximum Collector Emitter Saturation Voltage VceSAT

2.15V

Minimum Operating Temperature

-40°C

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Operating Temperature

125°C

Standards/Approvals

No

Series

FS150R12KT3

Automotive Standard

No

The infineon IGBT module the maximum rated repetitive peak collector current is 300 A and collector-emitter saturation voltag 2.15 V, gate threshold voltage is 6.5 V.

Collector-emitter cut-off current 5.0 mA

Temperature under switching conditions 125° C

Gate-emitter leakage current 400 nA

Reverse transfer capacitance 0.40 nF

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