Infineon IGBT Module, 150 A 1200 V
- RS-stocknr.:
- 244-5407
- Fabrikantnummer:
- FS150R12KT4B11BOSA1
- Fabrikant:
- Infineon
Subtotaal (1 tray van 10 eenheden)*
€ 828,90
(excl. BTW)
€ 1.003,00
(incl. BTW)
Informatie over voorraden is momenteel niet toegankelijk - Controleer het later nog eens opnieuw
Aantal stuks | Per stuk | Per tray* |
|---|---|---|
| 10 + | € 82,89 | € 828,90 |
*prijsindicatie
- RS-stocknr.:
- 244-5407
- Fabrikantnummer:
- FS150R12KT4B11BOSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Maximum Continuous Collector Current Ic | 150A | |
| Product Type | IGBT Module | |
| Maximum Collector Emitter Voltage Vceo | 1200V | |
| Number of Transistors | 6 | |
| Maximum Power Dissipation Pd | 750W | |
| Minimum Operating Temperature | -40°C | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.1V | |
| Maximum Operating Temperature | 175°C | |
| Series | FS | |
| Standards/Approvals | No | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Maximum Continuous Collector Current Ic 150A | ||
Product Type IGBT Module | ||
Maximum Collector Emitter Voltage Vceo 1200V | ||
Number of Transistors 6 | ||
Maximum Power Dissipation Pd 750W | ||
Minimum Operating Temperature -40°C | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Maximum Collector Emitter Saturation Voltage VceSAT 2.1V | ||
Maximum Operating Temperature 175°C | ||
Series FS | ||
Standards/Approvals No | ||
Automotive Standard No | ||
The infineon IGBT module the maximum rated repetitive peak collector current is 300 A and collector-emitter saturation voltag 2.10 V, gate threshold voltage is 6.4 V.
Collector-emitter cut-off current 1.0 mA
Temperature under switching conditions 150° C
Gate-emitter leakage current 100 nA
Reverse transfer capacitance 0.35 nF