STMicroelectronics STGYA50M120DF3 IGBT, 50 A 1200 V, 3-Pin, Through Hole

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Verpakkingsopties
RS-stocknr.:
248-4896
Fabrikantnummer:
STGYA50M120DF3
Fabrikant:
STMicroelectronics
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Merk

STMicroelectronics

Product Type

IGBT

Maximum Continuous Collector Current Ic

50A

Maximum Collector Emitter Voltage Vceo

1200V

Maximum Power Dissipation Pd

535W

Mount Type

Through Hole

Pin Count

3

Maximum Gate Emitter Voltage VGEO

20 V

Maximum Collector Emitter Saturation Voltage VceSAT

1.7V

Minimum Operating Temperature

-55°C

Maximum Operating Temperature

175°C

Series

STGYA50M120DF3

Standards/Approvals

RoHS

Length

15.9mm

Width

21.1 mm

Height

5.1mm

Automotive Standard

No

The STMicroelectronics product is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low loss and the short circuit functionality is essential. Furthermore, the positive VCEsat temperature coefficient and the tight parameter distribution result in safer paralleling operation.

Maximum junction temperature of 175 degree C

10 μs of short circuit withstand time

Low VCEsat

Tight parameter distribution

Positive VCEsat temperature coefficient

Low thermal resistance

Soft and fast recovery antiparallel diode

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