STMicroelectronics STGYA50M120DF3 IGBT, 50 A 1.2 kV, 3-Pin, Through Hole
- RS-stocknr.:
- 248-4895
- Fabrikantnummer:
- STGYA50M120DF3
- Fabrikant:
- STMicroelectronics
Bulkkorting beschikbaar
Bekijk bulkkortingSubtotaal (1 tube van 30 eenheden)*
€ 179,94
(excl. BTW)
€ 217,74
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 90,00
Op voorraad
- Plus verzending 30 stuk(s) vanaf 09 november 2026
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Aantal stuks | Per stuk | Per tube* |
|---|---|---|
| 30 - 120 | € 5,998 | € 179,94 |
| 150 + | € 5,924 | € 177,72 |
*prijsindicatie
- RS-stocknr.:
- 248-4895
- Fabrikantnummer:
- STGYA50M120DF3
- Fabrikant:
- STMicroelectronics
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | STMicroelectronics | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 50A | |
| Maximum Collector Emitter Voltage Vceo | 1.2kV | |
| Maximum Power Dissipation Pd | 535W | |
| Mount Type | Through Hole | |
| Pin Count | 3 | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.7V | |
| Maximum Gate Emitter Voltage VGEO | 20 V | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | RoHS | |
| Width | 21.1mm | |
| Height | 5.1mm | |
| Length | 15.9mm | |
| Series | STGYA50M120DF3 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk STMicroelectronics | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 50A | ||
Maximum Collector Emitter Voltage Vceo 1.2kV | ||
Maximum Power Dissipation Pd 535W | ||
Mount Type Through Hole | ||
Pin Count 3 | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.7V | ||
Maximum Gate Emitter Voltage VGEO 20 V | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals RoHS | ||
Width 21.1mm | ||
Height 5.1mm | ||
Length 15.9mm | ||
Series STGYA50M120DF3 | ||
Automotive Standard No | ||
The STMicroelectronics product is an IGBT developed using an advanced proprietary trench gate field stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low loss and the short circuit functionality is essential. Furthermore, the positive VCEsat temperature coefficient and the tight parameter distribution result in safer paralleling operation.
Maximum junction temperature of 175 degree C
10 μs of short circuit withstand time
Low VCEsat
Tight parameter distribution
Positive VCEsat temperature coefficient
Low thermal resistance
Soft and fast recovery antiparallel diode
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