Infineon IKW50N65H5FKSA1 IGBT Transistor Module, 80 A 650 V PG-TO247-3
- RS-stocknr.:
- 259-1535
- Fabrikantnummer:
- IKW50N65H5FKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 verpakking van 2 eenheden)*
€ 7,97
(excl. BTW)
€ 9,644
(incl. BTW)
Voeg 24 eenheden toe voor gratis bezorging
Op voorraad
- Plus verzending 238 stuk(s) vanaf 16 februari 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per verpakking* |
|---|---|---|
| 2 - 8 | € 3,985 | € 7,97 |
| 10 - 18 | € 3,625 | € 7,25 |
| 20 - 48 | € 3,385 | € 6,77 |
| 50 - 98 | € 3,145 | € 6,29 |
| 100 + | € 2,91 | € 5,82 |
*prijsindicatie
- RS-stocknr.:
- 259-1535
- Fabrikantnummer:
- IKW50N65H5FKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Maximum Continuous Collector Current | 80 A | |
| Maximum Collector Emitter Voltage | 650 V | |
| Maximum Gate Emitter Voltage | ±20V | |
| Maximum Power Dissipation | 305 W | |
| Package Type | PG-TO247-3 | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Maximum Continuous Collector Current 80 A | ||
Maximum Collector Emitter Voltage 650 V | ||
Maximum Gate Emitter Voltage ±20V | ||
Maximum Power Dissipation 305 W | ||
Package Type PG-TO247-3 | ||
The Infineon high speed IGBT5 is co-packed with RAPID 1 fast and soft anti-parallel diode in a TO-247 package, is defined as "best-in-class" IGBT. It has Best-in-class efficiency, resulting in lower junction and case temperature leading to higher device reliability. 50 V increase in the bus voltage possible without compromising reliability.
650 V breakthrough voltage
Compared to best-in-class HighSpeed 3 family
Factor 2.5 lower Qg
Factor 2 reduction in switching losses
200mV reduction in VCEsat
Co-packed with Rapid Si-diode technology
Low COES/EOSS
Mild positive temperature coefficient VCEsa
Compared to best-in-class HighSpeed 3 family
Factor 2.5 lower Qg
Factor 2 reduction in switching losses
200mV reduction in VCEsat
Co-packed with Rapid Si-diode technology
Low COES/EOSS
Mild positive temperature coefficient VCEsa
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