Infineon IGW40N65H5FKSA1 IGBT, 40 A 650 V, 3-Pin PG-TO-247
- RS-stocknr.:
- 258-0991
- Fabrikantnummer:
- IGW40N65H5FKSA1
- Fabrikant:
- Infineon
Bulkkorting beschikbaar
Subtotaal (1 eenheid)*
€ 4,24
(excl. BTW)
€ 5,13
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
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Aantal stuks | Per stuk |
|---|---|
| 1 - 9 | € 4,24 |
| 10 - 24 | € 4,02 |
| 25 - 49 | € 3,86 |
| 50 - 99 | € 3,68 |
| 100 + | € 3,44 |
*prijsindicatie
- RS-stocknr.:
- 258-0991
- Fabrikantnummer:
- IGW40N65H5FKSA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Product Type | IGBT | |
| Maximum Continuous Collector Current Ic | 40A | |
| Maximum Collector Emitter Voltage Vceo | 650V | |
| Maximum Power Dissipation Pd | 250W | |
| Package Type | PG-TO-247 | |
| Pin Count | 3 | |
| Maximum Gate Emitter Voltage VGEO | ±20 ±30 V | |
| Minimum Operating Temperature | -40°C | |
| Maximum Collector Emitter Saturation Voltage VceSAT | 1.65V | |
| Maximum Operating Temperature | 175°C | |
| Series | Highspeed5IGBTinTRENCHSTOPTM5technology | |
| Standards/Approvals | JEDEC | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Product Type IGBT | ||
Maximum Continuous Collector Current Ic 40A | ||
Maximum Collector Emitter Voltage Vceo 650V | ||
Maximum Power Dissipation Pd 250W | ||
Package Type PG-TO-247 | ||
Pin Count 3 | ||
Maximum Gate Emitter Voltage VGEO ±20 ±30 V | ||
Minimum Operating Temperature -40°C | ||
Maximum Collector Emitter Saturation Voltage VceSAT 1.65V | ||
Maximum Operating Temperature 175°C | ||
Series Highspeed5IGBTinTRENCHSTOPTM5technology | ||
Standards/Approvals JEDEC | ||
Automotive Standard No | ||
The Infineon TRENCHSTOP 5 IGBT technology redefines best-in-class IGBT by providing unmatched performance in terms of efficiency for hard switching applications. The new family is a major breakthrough in IGBT innovation to match the markets high efficiency demands of tomorrow.
650V breakthrough voltage
Factor 2.5 lower Q g
Factor 2 reduction in switching losses
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