Infineon IMBG120R350M1HXTMA1 IGBT Transistor Module PG-TO263-7

The Infineon CoolSiC1200 V, 350 mΩ SiC MOSFET in a D2PAK-7L package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability in operation. The low power losses of CoolSiC technology, combined with XT interconnection technology in a new 1200 V optimized SMD package, enables top efficiency and passive cooling potential in applications such as drives, chargers and industrial powers supplies.

Very low switching losses
Short-circuit withstand time, 3 μs
Fully controllable dV/dt
Efficiency improvement
Enabling higher frequency
Increased power density