Infineon IGBT Module, 4.7 A TO-263
- RS-stocknr.:
- 258-3756
- Fabrikantnummer:
- IMBG120R350M1HXTMA1
- Fabrikant:
- Infineon
Subtotaal (1 rol van 1000 eenheden)*
€ 1.920,00
(excl. BTW)
€ 2.320,00
(incl. BTW)
GRATIS bezorging voor bestellingen van meer dan € 75,00
Tijdelijk niet op voorraad
- Verzending vanaf 16 september 2026
Heeft u meer nodig? Klik op 'Controleer leverdata' voor extra voorraad en levertijden.
Aantal stuks | Per stuk | Per rol* |
|---|---|---|
| 1000 + | € 1,92 | € 1.920,00 |
*prijsindicatie
- RS-stocknr.:
- 258-3756
- Fabrikantnummer:
- IMBG120R350M1HXTMA1
- Fabrikant:
- Infineon
Specificaties
Datasheets
Wetgeving en compliance
Productomschrijving
Zoek vergelijkbare producten door een of meer kenmerken te selecteren.
Alles selecteren | Attribuut | Waarde |
|---|---|---|
| Merk | Infineon | |
| Maximum Continuous Collector Current Ic | 4.7A | |
| Product Type | IGBT Module | |
| Maximum Power Dissipation Pd | 65W | |
| Package Type | TO-263 | |
| Minimum Operating Temperature | -55°C | |
| Maximum Operating Temperature | 175°C | |
| Standards/Approvals | JEDEC47/20/22 | |
| Automotive Standard | No | |
| Alles selecteren | ||
|---|---|---|
Merk Infineon | ||
Maximum Continuous Collector Current Ic 4.7A | ||
Product Type IGBT Module | ||
Maximum Power Dissipation Pd 65W | ||
Package Type TO-263 | ||
Minimum Operating Temperature -55°C | ||
Maximum Operating Temperature 175°C | ||
Standards/Approvals JEDEC47/20/22 | ||
Automotive Standard No | ||
The Infineon CoolSiC1200 V, 350 mΩ SiC MOSFET in a D2PAK-7L package build on a state-of-the-art trench semiconductor process optimized to combine performance with reliability in operation. The low power losses of CoolSiC technology, combined with XT interconnection technology in a new 1200 V optimized SMD package, enables top efficiency and passive cooling potential in applications such as drives, chargers and industrial powers supplies.
Very low switching losses
Short-circuit withstand time, 3 μs
Fully controllable dV/dt
Efficiency improvement
Enabling higher frequency
Increased power density
Gerelateerde Links
- Infineon IMBG120R350M1HXTMA1 IGBT Transistor Module PG-TO263-7
- Infineon IGB15N65S5ATMA1 IGBT PG-TO263-3
- Infineon IGP50N60TXKSA1 IGBT Transistor Module, 90 A 600 V PG-TO220-3
- Infineon IGW50N65F5FKSA1 IGBT Transistor Module, 80 A 650 V PG-TO247-3
- Infineon IKW50N65H5FKSA1 IGBT Transistor Module, 80 A 650 V PG-TO247-3
- Infineon IKW50N65F5FKSA1 IGBT Transistor Module, 80 A 650 V PG-TO247-3
- Infineon IKP15N65H5XKSA1 IGBT Transistor Module, 30 A 650 V PG-TO220-3
- Infineon IGB15N60TATMA1 IGBT 3-Pin PG-TO263-3